BSC025N03MSGATMA1 datasheet

Маркировка

BSC025N03MSGATMA1
Производитель

Infineon Technologies
Описание

Infineon Technologies BSC025N03MSGATMA1 Mfr Package Description: GREEN, PLASTIC, TDSON-8 EU RoHS Compliant: Yes Package Shape: RECTANGULAR Package Style: SMALL OUTLINE Surface Mount: Yes Terminal Form: FLAT Terminal Finish: NOT SPECIFIED Terminal Position: DUAL Number of Terminals: 5 Package Body Material: PLASTIC/EPOXY Configuration: SINGLE WITH BUILT-IN DIODE Case Connection: DRAIN Number of Elements: 1 Transistor Application: SWITCHING Transistor Element Material: SILICON Channel Type: N-CHANNEL FET Technology: METAL-OXIDE SEMICONDUCTOR Operating Mode: ENHANCEMENT Transistor Type: GENERAL PURPOSE POWER Drain Current-Max (ID): 23 A DS Breakdown Voltage-Min: 30 V Avalanche Energy Rating (Eas): 135 mJ Drain-source On Resistance-Max: 0.0030 ohm Pulsed Drain Current-Max (IDM): 400 A
Количество страниц

10 шт.
Формат

PDF
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Размер файла

695,29 KB